MCQ Questions for Class 12 Physics Chapter 14 Semiconductor Electronics: Materials, Devices and Simple Circuits Part-1 with Answers

Semiconductor Electronics: Materials, Devices and Simple Circuits Part-1 Class 12 Physics MCQs Questions with Answers

Check the below NCERT MCQ Questions for Class 12 Physics Chapter 14 Semiconductor Electronics: Materials, Devices and Simple Circuits Part-1 with Answers Pdf free download. MCQ Questions for Class 12 Physics with Answers were prepared based on the latest exam pattern. We have Provided Semiconductor Electronics: Materials, Devices and Simple Circuits Part-1 Class 12 Physics MCQs Questions with Answers to help students understand the concept very well.

Class 12 Physics Chapter 14 Quiz

Class 12 Physics Chapter 14 MCQ Online Test

You can refer to NCERT Solutions for Class 12 Physics Chapter 14 Semiconductor Electronics: Materials, Devices and Simple Circuits Part-1 to revise the concepts in the syllabus effectively and improve your chances of securing high marks in your board exams.

Semiconductor Electronics: Materials, Devices and Simple Circuits Part-1 Class 12 Physics MCQ online test

Q1.	Bonds in a semiconductor :
	A.trivalent
	B.covalent
	C.bivalent
	D.monovalent

Ans: covalent

Q2.	Number of electrons in the valence shell of a semiconductor is:
	A.1
	B.2
	C.3
	D.4

Ans: 4

Q3.	Semiconductors of both p-type and n-type are produced by:
	A.ionic solids
	B.covalent solids
	C.metallic solids
	D.molecular solids

Ans: covalent solids

Q4.	With fall of temperature, the forbidden energy gap of a semiconductor
	A.increases
	B.decreases
	C.sometimes increases and sometimes decreases
	D.remains unchanged

Ans: remains unchanged

Q5.	In a p-type semiconductor, current conduction is by:
	A.atoms
	B.holes
	C.electrons
	D.protons

Ans: holes

Q6.	The relation between number of free electrons (n) in a semiconductor and temperature (T) is given by:
	A.n ∝ T
	B.n ∝ T²
	C.n ∝ T^1/2
	D.n ∝ T^3/2

Ans: n ∝ T^3/2

Q7.	In reverse biasing:
	A.large amount of current flows
	B.no current flows
	C.potential barrier across junction increases
	D.depletion layer resistance increases

Ans: potential barrier across junction increases

Q8.	Main function of a transistor is to :
	A.rectify
	B.simplify
	C.amplify
	D.all the above

Ans: amplify

Q9.	To obtain p-type silicon semiconductor, we need to dope pure silicon with:
	A.aluminium
	B.phosphorus
	C.oxygen
	D.germanium

Ans: aluminium

Q10.	On applying reverse bias to a junction diode, it:
	A.lowers the potential barrier
	B.raise the potential barrier
	C.increases the majority carrier current
	D.increases the minority carrier current

Ans: raise the potential barrier

Q11.	For germanium crystal, the forbidden energy gap in joules
	A.1.216 × 10^-19
	B.1.76 × 10^-19
	C.1.6 × 10^-19
	D.zero

Ans: 1.216 × 10^-19

Q12.	To obtain electrons as majority charge carriers in a semiconductors the impurity mixed is:
	A.monovalent
	B.divalent
	C.trivalent
	D.pentavalent

Ans: divalent

Q13.	In the middle of the depletion layer of a reverse biased p-n junction, the:
	A.electric field is zero
	B.potential is maximum
	C.electric field is maximum
	D.potential zero.